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The Influence of ZnF 2 Doping on the Electrical Properties and Microstructure in Bi 2 O 3 –ZnO‐Based Varistors
Author(s) -
Cheng Lihong,
Zheng Liaoying,
Li Guorong,
Yuan Kaiyang,
Gu Yan,
Zhang Fuping
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03386.x
Subject(s) - varistor , microstructure , doping , materials science , analytical chemistry (journal) , grain size , sintering , electrical resistivity and conductivity , mineralogy , metallurgy , voltage , chemistry , electrical engineering , optoelectronics , engineering , chromatography
ZnO varistors with different amounts of ZnF 2 from 0.00 to 0.80 mol% were prepared using a solid‐state reaction technique, to explore the potential application of ZnO. The F‐doping effects on the microstructure and electrical properties of ZnO‐based varistors were investigated. The average grain size of ZnO increased from 4.93 to 6.48 μm as the ZnF 2 content increased. Experimental results showed that as the ZnF 2 content increased, the breakdown voltage decreased from 617 to 367 V/mm, and the nonlinear coefficient did not change much. However, a slight increase was observed in the leakage current. Besides, when the ZnF 2 content increased, the donor concentration increased from 0.669 × 10 18 to 8.720 × 10 18 cm −3 . The study indicated that ZnF 2 played a similar role as sintering aids to promote grain growth and the substitutional F atoms in the bulk served as a donor to increase the donor concentration.