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Synthesis of Silicon Carbide Nanowires from a Hybrid of Amorphous Biopolymer and Sol–Gel‐Derived Silica
Author(s) -
Mishra Shivani B.,
Mishra Ajay K.,
Krause Rui W.,
Mamba Bhekie B.
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03332.x
Subject(s) - nanowire , materials science , scanning electron microscope , amorphous solid , raman spectroscopy , transmission electron microscopy , chemical engineering , silicon carbide , fourier transform infrared spectroscopy , silicon , nanotechnology , crystallography , composite material , chemistry , optics , optoelectronics , physics , engineering
We report here the formation of silicon carbide (SiC) nanowires from inorganic–organic hybrid of sol–gel‐derived silica and the commercially available lignin that is naturally abundant amorphous biopolymer. This organic–inorganic hybrid material in the absence of catalyst was carbothermally reduced for a period of 1 h at 1400°C in inert atmosphere followed by oxidization. The nanostructures were characterized by scanning electron microscopy and high resolution scanning electron microscopy, which show the continuous formation of β‐SiC nanowires in the range of 50–200 nm diameter and length of few micrometers. Transmission electron microscopy revealed Y‐shaped structures (branched) of the nanowires grown in the direction of parallel to the [100] plane having two heads and one leg. The nanowires were formed with joints that were formed at regular intervals as circular rings. The deposition of silica layer on the outer surface of the nanowires was also observed. According to the X‐ray diffraction pattern, peaks at 2θ=35.9° and 59.8° indicate the formation of β‐SiC and a sharp peak at 2θ=22.1° suggests the presence of unreacted crystalline silica (crystoballite). The Raman shifts for β‐SiC appeared as small peaks at 795.6 and 983.1 cm −1 , respectively. The characteristic vibration of SiC at 795 cm −1 in Fourier transform infrared spectroscopy was also observed.