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Surface Chemistry of Ion Irradiated and Heat‐Treated Mullite‐Type Bi 2 Ga 4 O 9 Single Crystals
Author(s) -
Palomares Francisco J.,
Paz Elvira,
Soria Federico,
Moya Jose S.,
Burianek Manfred,
Muehlberg Manfred,
Schneider Hartmut
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03296.x
Subject(s) - irradiation , sublimation (psychology) , x ray photoelectron spectroscopy , sputtering , annealing (glass) , materials science , analytical chemistry (journal) , ion , single crystal , mullite , stoichiometry , crystallography , chemistry , nanotechnology , chemical engineering , thin film , ceramic , metallurgy , psychology , physics , organic chemistry , chromatography , nuclear physics , engineering , psychotherapist
The gas–solid interface of ceramics is a key aspect, since it is where reactions occur and sensing signals are generated. Therefore the chemistry of as‐grown mullite‐type Bi 2 Ga 4 O 9 (110) single‐crystals surfaces and its change due to thermal treatments (500°–800°C) under ultra high vacuum conditions and irradiation by low energy ions (Ar + ) have been investigated by in situ X‐ray photoelectron spectroscopy. Ion bombardment causes preferential sputtering of O atoms bonded to Bi, and partial reduction of Bi 3+ to metallic Bi 0 , whereas Ga 3+ is not affected. Upon annealing under vacuum conditions, simultaneous O and Bi interdiffusion from the bulk of the crystals and segregation onto the surfaces on the one hand, and sublimation of metallic Bi present on the outermost surface layers on the other hand have been observed. Because of these dynamical processes the chemical composition of the surface, above 600°C recovers to the nominal (110) surface stoichiometry and to the Bi 3+ and Ga 3+ oxidation states of Bi 2 Ga 4 O 9 . The same effects were found by annealing the single crystals in air at 700°C. Changes of the morphology of the mullite‐type Bi 2 Ga 4 O 9 (110) single‐crystals surfaces upon ion irradiation and thermal treatments have been monitored by atomic force microscopy. Ion irradiation produces a significant sputtering‐induced increase of the surface roughness. The smooth pillow‐like structure of the irradiated surfaces after annealing at 700° and 800°C may indicate the partial formation of a glassy or pseudo‐amorphous phase.