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Synthesis of an AlN Polycrystalline Bulk Layer and Nanotubes by Using NH 3 and Bi
Author(s) -
Morito Haruhiko,
Ide Tomoyuki,
Karahashi Taiki,
Orikasa Hironori,
Yamada Takahiro,
Yamane Hisanori
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03286.x
Subject(s) - materials science , transmission electron microscopy , boron nitride , crystallite , crucible (geodemography) , layer (electronics) , scanning electron microscope , nitride , bismuth , aluminium nitride , electron diffraction , diffraction , crystallography , analytical chemistry (journal) , composite material , aluminium , nanotechnology , metallurgy , chemistry , optics , computational chemistry , physics , chromatography
A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy. The platelet grains of AlN with a size of 0.1–1.0 μm and having preferred orientation of the c ‐axis perpendicular to the layer were formed at the crucible side. Nanotubes 6–15 μm long and about 20–100 nm thick grew on the gas phase side of the layer.