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High Dielectric Permittivity Behavior in Cu‐Doped CaTiO 3
Author(s) -
Cheng Bo,
Lin YuanHua,
Yang Hao,
Lan Jinle,
Nan CeWen,
Xiao Xi,
He Jinliang
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03254.x
Subject(s) - materials science , permittivity , dielectric , doping , sintering , crystallite , activation energy , ceramic , percolation theory , analytical chemistry (journal) , dielectric loss , polarization (electrochemistry) , percolation (cognitive psychology) , mineralogy , condensed matter physics , conductivity , composite material , chemistry , optoelectronics , metallurgy , physics , chromatography , neuroscience , biology
Cu‐doped CaTiO 3 ‐based polycrystalline ceramics have been prepared by the conventional solid‐state sintering. Our results indicate that the dielectric constant can be enhanced greatly by increasing the Cu‐doped content, which show weak frequency and temperature dependence. The fitted activation energy is almost same (∼0.10 eV) as the Cu‐doped content is 0.4–0.6, which may be ascribed to the first ionization of the oxygen vacancies. The origin of the high dielectric permittivity observed in these Ca 1− x Cu x TiO 3 ‐based ceramics should be attributed to the interfacial polarization mechanism, and can be well described by the percolation theory with f c ≈0.27 and s ≈0.74.