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Oxidation of Silicon Carbide Fibers During Static Fatigue in Air at Intermediate Temperatures
Author(s) -
Gauthier Wilfried,
Pailler Frédéric,
Lamon Jacques,
Pailler Rene
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03180.x
Subject(s) - materials science , silicon carbide , composite material , auger electron spectroscopy , scanning electron microscope , fiber , fracture (geology) , stress (linguistics) , fracture mechanics , oxide , metallurgy , linguistics , philosophy , physics , nuclear physics
The static fatigue of SiC‐based fiber bundles and single fibers has been examined in previous papers, with emphasis placed on the analysis of the stress–rupture time data, and on the modelling of delayed failure from slow crack growth. The present paper investigates the oxidation of the fibers during static fatigue, at temperatures in the intermediate temperature range (500°–800°C). Two oxidation‐induced phenomena have been evidenced: the formation of a thin silica film at the surface of fibers and the delayed failure of fiber bundles and single filaments. The stress–rupture time data are interpreted with respect to the chemical and structural characteristics of fibers, and to the oxide film growth rate. The structural analysis of the fibers was carried out using scanning electron microscopy and Auger electron spectroscopy. Delayed failure was found to result from slow crack propagation from surface defects, as a result of the consumption of the free carbon at grain boundaries and the local stresses induced by the SiC→SiO 2 transformation at the crack tip. The respective contributions of these phenomena to static fatigue are discussed.