Premium
Dielectric Property of Aluminum‐Doped SiC Powder by Solid‐State Reaction
Author(s) -
Li Zhimin,
Zhou Wancheng,
Su Xiaolei,
Huang Yunxia,
Li Guifang,
Wang Yupeng
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03140.x
Subject(s) - materials science , doping , impurity , raman spectroscopy , powder diffraction , permittivity , dielectric , analytical chemistry (journal) , phase (matter) , diffraction , aluminium , solid state , crystallography , composite material , optics , chemistry , optoelectronics , organic chemistry , physics
The Al‐doped SiC powder was prepared by solid‐state reaction at 2000°C, using Al powder and SiC powder as the starting materials. The X‐ray diffraction patterns show that there is no impurity phase in the doped powder. The Raman spectra of doped SiC reveal that the intensities of all the characteristic peaks decrease, and both the 783 and 964 cm −1 peaks shift to a higher wavenumber. The electric permittivities of undoped and doped SiC samples were determined in the frequency range of 8.2–12.4 GHz. Results show that the real part ɛ′ and imaginary part ɛ″ of the complex permittivity of SiC powder are greatly improved through Al doping.