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High‐Energy Density Capacitors Utilizing 0.7 BaTiO 3 –0.3 BiScO 3 Ceramics
Author(s) -
Ogihara Hideki,
Randall Clive A.,
TrolierMcKinstry Susan
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03104.x
Subject(s) - capacitor , ceramic capacitor , materials science , dielectric , ceramic , film capacitor , microstructure , composite material , energy density , optoelectronics , electrical engineering , engineering physics , voltage , engineering
A high, temperature‐stable dielectric constant (∼1000 from 0° to 300°C) coupled with a high electrical resistivity (∼10 12 Ω·cm at 250°C) make 0.7 BaTiO 3 –0.3 BiScO 3 ceramics an attractive candidate for high‐energy density capacitors operating at elevated temperatures. Single dielectric layer capacitors were prepared to confirm the feasibility of BaTiO 3 –BiScO 3 for this application. It was found that an energy density of about 6.1 J/cm 3 at a field of 73 kV/mm could be achieved at room temperature, which is superior to typical commercial X7R capacitors. Moreover, the high‐energy density values were retained to 300°C. This suggests that BaTiO 3 –BiScO 3 ceramics have some advantages compared with conventional capacitor materials for high‐temperature energy storage, and with further improvements in microstructure and composition, could provide realistic solutions for power electronic capacitors.