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Synthesis and Characterization of Bulk, Vitreous Cadmium Germanium Arsenide
Author(s) -
Johnson Bradley R.,
Riley Brian J.,
Sundaram Shanmugavelayutham K.,
Crum Jarrod V.,
Henager Jr. Charles H.,
Zhang Yanwen,
Shutthanandan Vaithiyalingam,
Seifert Carolyn E.,
Van Ginhoven Renee M.,
Chamberlin Clyde E.,
Rockett Angus A.,
Hebert Damon N.,
Aquino Angel R.
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03001.x
Subject(s) - germanium , rutherford backscattering spectrometry , materials science , amorphous solid , scanning electron microscope , analytical chemistry (journal) , spectroscopy , doping , band gap , fabrication , quenching (fluorescence) , characterization (materials science) , mineralogy , silicon , optoelectronics , optics , crystallography , thin film , chemistry , nanotechnology , composite material , medicine , physics , alternative medicine , chromatography , quantum mechanics , pathology , fluorescence
Cadmium germanium diarsenide glasses were synthesized in bulk form (∼2.4 cm 3 ) using procedures adapted from the literature. Several issues involved in the fabrication and quenching of amorphous CdGe x As 2 ( x =0.45, 0.65, 0.85, and 1.00, where x is the molar ratio of Ge to 1 mol of Cd) are described. An innovative processing route is presented to enable fabrication of high‐purity, vitreous, crack‐free ingots with sizes up to 10 mm diameter, and 30–40 mm long. Specimens from selected ingots were characterized using thermal analysis, optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, particle‐induced X‐ray emission, Rutherford backscattering, secondary ion mass spectrometry, X‐ray diffraction, density, and optical spectroscopy. Variations in properties as a function of processing conditions and composition are described. Results show that the density of defect states in the middle of the band gap and near the band edges can be decreased three ways: through suitable control of the processing conditions, by doping the material with hydrogen, and by increasing the concentration of Ge in the glass.