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Microwave Dielectric Properties of Li 2 TiO 3 Ceramics Doped with ZnO–B 2 O 3 Frit
Author(s) -
Liang Jun,
Lu WenZhong
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.02972.x
Subject(s) - frit , materials science , sintering , ceramic , dielectric , doping , microwave , volatilisation , analytical chemistry (journal) , mineralogy , composite material , chemistry , optoelectronics , physics , chromatography , quantum mechanics , organic chemistry
A type of new low sintering temperature ceramic, Li 2 TiO 3 ceramic, has been found. Although it is difficult for the Li 2 TiO 3 compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li 2 O, dense Li 2 TiO 3 ceramics were obtained by conventional solid‐state reaction method at the sintering temperature of 900°C with the addition of ZnO–B 2 O 3 frit. The sintering behavior and microwave dielectric properties of Li 2 TiO 3 ceramics with less ZnO–B 2 O 3 frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B 2 O 3 frit can lower the sintering temperature of the Li 2 TiO 3 ceramics, but it does not apparently degrade the microwave dielectric properties of the Li 2 TiO 3 ceramics. Typically, the good microwave dielectric properties of ɛ r =23.06, Q × f =32 275 GHz, τ f = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B 2 O 3 frit‐doped Li 2 TiO 3 ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li 2 TiO 3 ceramic system may be a promising candidate for low‐temperature cofired ceramics applications.