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Facile Synthesis of Si 3 N 4 Nanocrystals Via an Organic–Inorganic Reaction Route
Author(s) -
Zhu HuiLing,
Han FuDong,
Bi JianQiang,
Bai YuJun,
Qi YongXin,
Pang LinLin,
Wang ChengGuo,
Li ShaoJie,
Lu ChengWei
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02898.x
Subject(s) - x ray photoelectron spectroscopy , nanocrystalline material , nanocrystal , transmission electron microscopy , silicon nitride , yield (engineering) , materials science , silicon , reaction mechanism , chemistry , crystallography , nuclear chemistry , analytical chemistry (journal) , chemical engineering , nanotechnology , catalysis , organic chemistry , engineering , metallurgy
Silicon nitride (Si 3 N 4 ) nanocrystals were synthesized at about 250°C by a simple organic–inorganic reaction between CH 3 SiCl 3 and NaN 3 . The yield of Si 3 N 4 is no <70 wt% based on the amount of precursor CH 3 SiCl 3 used in the reaction and TGA analysis. X‐ray diffraction indicates the formation of a mixture of α‐ and β‐Si 3 N 4 . Particles with size from 40 to 100 nm are dominant in the products examined by transmission electron microscopy. X‐ray photoelectron spectroscopy gives an atomic ratio of Si:N around 0.75:1. The formation of nanocrystalline Si 3 N 4 during the organic–inorganic reaction goes through an intermediate product of NaSi 2 N 3 , which is important for understanding the reaction mechanism.