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Dielectric Properties of Pb 0.97 La 0.02 (Zr 0.87− x Sn x Ti 0.13 )O 3 Thin Films with Compositions near the Morphotropic Phase Boundary
Author(s) -
Hao Xihong,
Zhai Jiwei,
Yao Xi
Publication year - 2009
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02873.x
Subject(s) - dielectric , materials science , thin film , phase boundary , ferroelectricity , curie temperature , analytical chemistry (journal) , dielectric loss , permittivity , trigonal crystal system , phase (matter) , mineralogy , crystallography , nanotechnology , condensed matter physics , crystal structure , optoelectronics , chemistry , physics , ferromagnetism , organic chemistry , chromatography
Pb 0.97 La 0.02 (Zr 0.87− x Sn x Ti 0.13 )O 3 (PLZST, x =0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FE R ) region, near the morphotropic phase boundary (MPB), were deposited on the Pt‐electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature‐dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature ( T c ) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films with x =0.07, and the maximum τ value was 78.1%.