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Effect of B 2 O 3 on the Sintering Condition and Microwave Dielectric Properties of Bi 4 (SiO 4 ) 3 Ceramics
Author(s) -
Joung MiRi,
Kim JinSeong,
Song MyungEun,
Paik DongSu,
Nahm Sahn,
Paik JongHoo,
Choi ByungHyun
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02819.x
Subject(s) - sintering , materials science , ceramic , microstructure , dielectric , microwave , analytical chemistry (journal) , mineralogy , porosity , phase (matter) , composite material , chemistry , chromatography , physics , optoelectronics , organic chemistry , quantum mechanics
B 2 O 3 was added to Bi 4 (SiO 4 ) 3 ceramics to aid the densification process at low temperatures (≤900°C). When the B 2 O 3 content was <3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B 2 O 3 exceeded 3.0 mol%, the Bi 4 (SiO 4 ) 3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B 2 O 3 . The microwave dielectric properties were influenced by the amount of B 2 O 3 , and the 3.0 mol% B 2 O 3 ‐added Bi 4 (SiO 4 ) 3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of ɛ r =15.6, Q × f =36 281 GHz, and τ f =−22 ppm/°C.