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Dielectric Tunable Properties and Relaxor Behavior of (Pb 0.5 Ba 0.5 )ZrO 3 Thin Films
Author(s) -
Hao Xihong,
Zhai Jiwei,
Yao Xi
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02761.x
Subject(s) - materials science , dielectric , thin film , figure of merit , analytical chemistry (journal) , phase (matter) , sol gel , phase transition , optoelectronics , condensed matter physics , nanotechnology , chemistry , chromatography , physics , organic chemistry
Pb 0.5 Ba 0.5 ZrO 3 (PBZ50) thin films with a thickness of about 500 nm in the paraelectric‐phase were deposited on Pt/Ti/SiO 2 /Si substrates via the sol–gel process. The room‐temperature dielectric measurements showed that the tunability and figure of merit (FOM) of the PBZ50 films at the maximum external DC field of 200 kV/cm were 39% and 38%, respectively. The results of temperature‐dependent dielectric measurements confirmed that PBZ50 films had a typical diffuse phase transition characteristic and relaxor behavior.