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High Tunability of Highly (100)‐Oriented Lead Zirconate Titanium Thin Films
Author(s) -
Wu Jiagang,
Xiao Dingquan,
Wang Yuanyu,
Zhu Jianguo,
Zhu Jiliang,
Xie Ruishi
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02709.x
Subject(s) - materials science , dielectric , zirconate , sputter deposition , thin film , composite material , titanium , lead zirconate titanate , layer (electronics) , electric field , sputtering , optoelectronics , ferroelectricity , ceramic , nanotechnology , titanate , metallurgy , physics , quantum mechanics
Highly (100)‐oriented Pb(Zr 0.20 Ti 0.80 )O 3 (PZT) thin films for electrically tunable applications were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by RF magnetron sputtering with a PbO x buffer layer. The dielectric properties of PZT films were investigated. These results indicated that the applied electric field and measured frequency strongly affected the films' tunability. The PZT films exhibited good dielectric tunability (69.3%) as measured at 1 kHz and 18 V. The related physics mechanism for enhanced tunability was also discussed. The enhanced tunability is attributed to the (100) orientation of PZT films and is a result of the biaxial tensile stress making the polar axis oriented in plane.