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Synthesis and Microwave Dielectric Properties of Bi 4 (SiO 4 ) 3 Ceramics
Author(s) -
Kim JinSeong,
Joung MiRi,
Song MyungEun,
Nahm Sahn,
Paik JongHoo,
Choi ByungHyun,
Yoo SoonJae
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02657.x
Subject(s) - ceramic , materials science , dielectric , microwave , homogeneous , phase (matter) , mineralogy , analytical chemistry (journal) , sintering , composite material , chemistry , optoelectronics , physics , organic chemistry , chromatography , thermodynamics , quantum mechanics
Bi 4 (SiO 4 ) 3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12 SiO 20 second phase was formed at approximately 400°C, while the Bi 2 O 2 SiO 3 and Bi 4 (SiO 4 ) 3 phases started to form at 600°C. The amount of the Bi 12 SiO 20 and Bi 2 O 2 SiO 3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi 4 (SiO 4 ) 3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high‐density Bi 4 (SiO 4 ) 3 ceramics were obtained. In particular, the Bi 4 (SiO 4 ) 3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of ɛ r =14.9, Q × f =36 101 GHz and τ f =−9.42 ppm/°C.