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High Dielectric Properties of Bi 1.5 Zn 1.0 Nb 1.5 O 7 Thin Films Fabricated at Room Temperature
Author(s) -
Ryu Jungho,
Kim KunYoung,
Choi JongJin,
Hahn ByungDong,
Yoon WoonHa,
Park DongSoo,
Park Chan
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02539.x
Subject(s) - dielectric , materials science , capacitance , capacitor , thin film , pyrochlore , dielectric loss , high κ dielectric , foil method , analytical chemistry (journal) , silicon , optoelectronics , composite material , nanotechnology , electrode , electrical engineering , voltage , chemistry , organic chemistry , phase (matter) , chromatography , engineering
Paraelectric, pyrochlore thin films of Bi 1.5 Zn 1.0 Nb 1.5 O 7 were fabricated on platinized silicon and Ni‐plated Cu foil by aerosol deposition at room temperature for embedded capacitor applications. The highly dense films thus obtained showed superior dielectric properties without any heat treatment. The dielectric constant and dielectric loss of tan δ of the films at 100 kHz were over 160 and less 0.05, respectively. Furthermore, the films showed markedly superior capacitance density (>100 nF/cm 2 ) and low leakage current density (10 −4 –10 −7 A/cm 2 at 3.0 V). The results demonstrated the promising potential for embedded passive components in printed circuit board applications.