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Low‐Temperature Synthesis and Characterization of Lead Zinc Niobate Thick Films
Author(s) -
Chen Xiuli,
Fan Huiqing,
Chen Jin,
Liu Laiju
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02530.x
Subject(s) - materials science , dielectric , curie temperature , coercivity , analytical chemistry (journal) , permittivity , temperature coefficient , ferroelectricity , relaxation (psychology) , polarization (electrochemistry) , condensed matter physics , nuclear magnetic resonance , ferromagnetism , composite material , chemistry , optoelectronics , psychology , social psychology , physics , chromatography
Perovskite Pb(Zn 1/3 Nb 2/3 )O 3 (PZN) thick films were prepared by a hydrothermal route at a low temperature (150°C) on Ti metal, where the titanium (Ti) metal served as both the substrate and bottom electrode for the PZN films. The thickness of the PZN film fabricated on the Ti substrate was about 20 μm. We have demonstrated that the concentration of KOH plays a key role in obtaining the perovskite structure in the PZN film. The dielectric relaxation was studied as a function of temperature and frequency. A dispersion of the maximum dielectric permittivity (ɛ max ) appears around the temperature of T m , which shifts toward higher temperatures with increasing frequency. The variation of T m with frequency follows the Vogel–Fulcher relationship. The variation of 1/ɛ with temperature above T m deviates from the Curie–Weiss (CW) law but satisfies the modified CW law. The relaxation indication coefficient (γ) and broadening parameter (Δ) were estimated from a quadratic fit of the modified Curie–Weiss law and were found to be 2.00 and 42 K, respectively, indicating strong relaxor behavior. The samples showed excellent reproducibility in the measurements of leakage current, a remnant polarization of 14 μC/cm 2 , and a coercive field of 300 kV/m.