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Sintering Behavior, Phase Evolution, and Microwave Dielectric Properties of Bi(Sb 1− x Ta x )O 4 Ceramics
Author(s) -
Zhou Di,
Wang Hong,
Yao Xi,
Pang LiXia
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02462.x
Subject(s) - monoclinic crystal system , orthorhombic crystal system , materials science , ceramic , dielectric , sintering , analytical chemistry (journal) , phase (matter) , microwave , q value , mineralogy , crystallography , crystal structure , metallurgy , chemistry , physics , optoelectronics , quantum mechanics , nuclear physics , organic chemistry , chromatography
Sintering behavior, phase evolution, and microwave dielectric properties of Bi(Sb 1− x Ta x )O 4 ceramics (0.05≤ x ≤0.60) were studied and their relationships were discussed in detail. Phase studies revealed that a pure monoclinic phase could be formed when x ≤0.20 and a pure orthorhombic phase could be obtained when x ≥0.50. As the x value increased from 0.05 to 0.60, the densified temperature of Bi(Sb 1− x Ta x )O 4 ceramics decreased from 1050° to about 960°C whereas the density increased from 8.07 to 8.41 g/cm 3 . The microwave dielectric constant increased from 20.5 to 34 whereas the Q × f value decreased from 60 000 to 29 000 GHz. In the monoclinic phase region, the temperature coefficients of resonant frequency shifted linearly from −58 to −45 ppm/°C as the x value increased from 0.05 to 0.2 and then remained constant at about −12 ppm/°C when x ≥0.40. The Bi(Sb 1− x Ta x )O 4 ceramics are promising for application of low‐temperature cofired ceramics technology.