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Oxidation Resistance of Fully Dense ZrB 2 with SiC, TaB 2 , and TaSi 2 Additives
Author(s) -
Peng Fei,
Speyer Robert F.
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02368.x
Subject(s) - materials science , tantalum , thermogravimetry , layer (electronics) , oxide , atmospheric temperature range , porosity , silicon , composite material , hot isostatic pressing , silicon carbide , mineralogy , chemical engineering , metallurgy , microstructure , chemistry , physics , meteorology , engineering
Specimens of ZrB 2 containing various concentrations of B 4 C, SiC, TaB 2 , and TaSi 2 were pressureless‐sintered and post‐hot isostatic pressed to their theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150°–1550°C. SiC additions improved oxidation resistance over a broadening range of temperatures with increasing SiC content. Tantalum additions to ZrB 2 –B 4 C–SiC in the form of TaB 2 and/or TaSi 2 increased oxidation resistance over the entire evaluated spectrum of temperatures. TaSi 2 proved to be a more effective additive than TaB 2 . Silicon‐containing compositions formed a glassy surface layer, covering an interior oxide layer. This interior layer was less porous in tantalum‐containing compositions.