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Grain Growth Behavior of Bi 2 O 3 ‐Doped ZnO Grains in a Multilayer Varistor
Author(s) -
Kuo ShuTing,
Tuan WeiHsing,
Lao YehWu,
Wen ChungKai,
Chen HueyRu
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02309.x
Subject(s) - materials science , grain growth , sintering , electrode , doping , grain size , bismuth , zinc , composite material , varistor , metallurgy , optoelectronics , electrical engineering , chemistry , voltage , engineering
A novel bismuth‐doped zinc oxide (ZnO) laminated structure is prepared in the present study. Seven layers with thickness ranging from 20 to 140 μm are laminated together with platinum (Pt) inner electrodes. The growth of Bi 2 O 3 ‐doped ZnO grains within a very limited space between Pt electrodes is investigated. The grain growth behavior outside the confinement of electrodes is also studied for comparison purposes. At the beginning of sintering, a similar grain growth behavior is observed at different locations of the laminated structure. However, as sintering proceeds, the rate of grain growth within the Pt inner electrodes is decreased because of the decrease of available transportation paths. The grains between the electrodes then develop into a columnar shape as they make contact with the electrodes above and below them. Both the grain size and its distribution decrease with decreasing layer thickness.