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Dielectric Behavior and Cofiring with Silver of Monoclinic BiSbO 4 Ceramic
Author(s) -
Zhou Di,
Wang Hong,
Yao Xi,
Pang LiXia
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2008.02302.x
Subject(s) - cofiring , ceramic , monoclinic crystal system , materials science , dielectric , temperature coefficient , permittivity , analytical chemistry (journal) , phase (matter) , composite material , mineralogy , crystallography , chemistry , crystal structure , optoelectronics , organic chemistry , combustion
Pure monoclinic phase of BiSbO 4 ceramic was synthesized using the solid‐state reaction method. BiSbO 4 ceramics can be well sintered between 960° and 1080°C. The dielectric constant of BiSbO 4 ceramic was about 20.1 and dielectric loss was about 0.055–2.5 × 10 −4 at 1 MHz. With the measured frequencies increasing from 100 to 900 kHz, the temperature coefficients of permittivity decreased from +224.1 to +95.9 ppm/°C. At the microwave range, the best microwave dielectric properties were obtained in the ceramic sintered at 1080°C/2 h with a permittivity of 19.3, a Q f value of about 70 000 GHz, and a temperature coefficient of resonant frequency of −62 ppm/°C. Cofiring between BiSbO 4 ceramic and 20 wt% Ag was also investigated, and it was found that after cofiring at 900°C for 5 h only very little unknown phase containing a little amount of Ag was formed and most Ag was scattered in grain boundaries.