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Synthesis and Electrical Properties of Stabilized Manganese Dioxide (α‐MnO 2 ) Thin‐Film Electrodes
Author(s) -
Kwon DoKyun,
Akiyoshi Teppei,
Lee Hyeongjae,
Lanagan Michael T.
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02198.x
Subject(s) - manganese , materials science , borosilicate glass , thin film , annealing (glass) , cathode , hollandite , chemical engineering , inorganic chemistry , analytical chemistry (journal) , chemistry , composite material , metallurgy , nanotechnology , chromatography , engineering
Manganese dioxide (α‐MnO 2 ) thin films have been explored as a cathode material for reliable glass capacitors. Conducting α‐MnO 2 thin films were deposited on a borosilicate glass substrate by a chemical solution deposition technique. High carbon activities originated from manganese acetate precursor, (Mn(C 2 H 3 O 2 ) 2 ·4H 2 O) and acetic acid solvent (C 2 H 4 O 2 ), which substantially reduced MnO 2 phase stability, and resulted in Mn 2 O 3 formation at pyrolysis temperature in air. The α‐MnO 2 structure was stabilized by Ba 2+ insertion into a (2 × 2) oxygen tunnel frame to form a hollandite structure. With 15–20 mol% Ba addition, a conducting α‐MnO 2 thin film was obtained after annealing at 600–650°C, exhibiting low electrical resistivity (∼1 Ω·cm), which enables application as a cathode material for capacitors. The hollandite α‐MnO 2 phase was stable at 850°C, and thermally reduced to the insulating bixbyte (Mn 2 O 3 ) phase after annealing at 900°C. The phase transition temperature of Ba containing α‐MnO 2 was substantially higher than the reported transition temperature for pure MnO 2 (∼500°C).