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On the Mechanism of Densification of Porous Alumina by Infiltration with an Aqueous Solution of Chromium Oxide
Author(s) -
Mogilevsky Pavel,
Lee HeeDong
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02188.x
Subject(s) - materials science , sapphire , transmission electron microscopy , porosity , epitaxy , chemical engineering , chromium , aqueous solution , oxide , deposition (geology) , scanning electron microscope , infiltration (hvac) , mineralogy , composite material , metallurgy , nanotechnology , layer (electronics) , chemistry , optics , paleontology , laser , physics , engineering , sediment , biology
Densification of porous alumina by CrO 3 infiltration was investigated on model composites containing a sapphire interface. Gas–solid deposition of Cr 2 O 3 from CrO 3 source on sapphire and glass at 600°C was also investigated. The deposited Cr 2 O 3 layers were characterized using X‐ray diffraction and transmission electron microscopy. It was found that similar to gas‐phase deposition on sapphire, in CrO 3 ‐infiltrated porous alumina Cr 2 O 3 grows epitaxially on adjacent alumina surfaces, suggesting a gas–solid condensation mechanism. The deposition rate and morphology of the Cr 2 O 3 film deposited on alumina depend strongly on the crystallographic orientation.