Premium
In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge 30 Se 70 Thin Film
Author(s) -
Kovalskiy Andriy,
Miller Alfred C.,
Jain Himanshu,
Mitkova Maria
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02178.x
Subject(s) - x ray photoelectron spectroscopy , chalcogenide , analytical chemistry (journal) , materials science , valence (chemistry) , diffusion , thin film , ternary operation , surface diffusion , in situ , crystallography , chemistry , nanotechnology , chemical engineering , metallurgy , adsorption , physics , organic chemistry , chromatography , thermodynamics , computer science , engineering , programming language
High‐resolution X‐ray photoelectron spectroscopy is used to identify the mechanism of X‐ray‐induced Ag diffusion into Ge 30 Se 70 chalcogenide glass thin films, which are prepared in situ to avoid oxygen contamination. From the analysis of Ge 3d, Se 3d, and Ag 3d core levels, and valence band spectra, changes in the electronic structure are determined as Ag diffuses gradually with increasing irradiation. The ternary phase based on Ge 2 Se 6 units, which contains homopolar Ge–Ge bonds, forms when diffusion approaches equilibrium where Ag content ∼30 at.%. The formation of a Se‐rich composition is indicated in the near‐surface region at the initial stage of the process, but the previously assumed Ag 2 Se phase is not detected.