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Multiferroic BiFeO 3 Thin Films Buffered by a SrRuO 3 Layer
Author(s) -
Zheng Rongyan,
Gao Xingsen,
Wang John,
Ramakrishna Seeram
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02128.x
Subject(s) - materials science , multiferroics , thin film , crystallinity , coercivity , sputter deposition , polarization (electrochemistry) , crystallization , grain size , sputtering , ferroelectricity , optoelectronics , nanotechnology , condensed matter physics , chemical engineering , composite material , dielectric , chemistry , physics , engineering
Multiferroic BiFeO 3 thin films of huge polarization have been successfully realized by using SrRuO 3 as a buffer layer on a Pt/TiO 2 /SiO 2 /Si substrate. They consist of a single perovskite phase and are nearly randomly orientated, where the SrRuO 3 buffer layer lowers the crystallization temperature and improves the crystallinity of BiFeO 3 . With increasing deposition temperature during magnetron sputtering, they undergo an apparent grain growth and reduction in surface roughness. The multiferroic thin films deposited on the SrRuO 3 ‐buffered Pt/TiO 2 /SiO 2 /Si substrate at higher temperatures show much improved polarization and reduced coercive field, together with a lowered leakage current. A huge remnant polarization (2 P r ) of 150 μC/cm 2 and a coercive field (2 E c ) of 780 kV/cm were measured for the BiFeO 3 film deposited at 650°C.