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Growth Kinetic and Characterization of RF‐Sputtered ZnO:Al Nanostructures
Author(s) -
Choopun Supab,
Hongsith Niyom,
Wongrat Ekasiddh,
Kamwanna Teerasak,
Singkarat Somsorn,
Mangkorntong Pongsri,
Mangkorntong Nikorn,
Chairuangsri Torranin
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02110.x
Subject(s) - nanostructure , materials science , transmission electron microscopy , electrical resistivity and conductivity , raman spectroscopy , hall effect , sputtering , nanotechnology , thin film , optics , physics , electrical engineering , engineering
ZnO:Al nanostructures with 1% by mole of Al were prepared by radio frequency sputtering on copper and quartz substrates. The ZnO:Al nanostructures obtained exhibited needle‐ or tree‐like structures with the diameter ranging from 30 to 100 nm. It was suggested that these ZnO:Al nanostructures could be single‐crystalline hexagonal structures growing along thedirection with branching along the 〈0001〉 direction. From Hall measurement, ZnO:Al nanostructures had a resistivity in the order of 10 −2 Ω·cm, a carrier concentration of 10 20 cm −3 , and a Hall mobility of 3 cm 2 ·(V·s) −1 . From X‐ray diffraction, transmission electron microscopy and Raman results, ZnO:Al nanostructures haddirection perpendicular to the surface, whereas ZnO nanobelts had the c ‐axis perpendicular to the surface. In addition, the growth mechanism of the wire and belt‐like nanostructure could be explained by kinetics of anisotropic growth via a vapor–solid mechanism. This information would be useful for further applications of ZnO:Al nanostructures.