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Dielectric and Piezoelectric Properties of SrBi 2− x Sm x Nb 2 O 9 ( x =0, 0.05, 0.1, 0.2, 0.3, and 0.4) Ceramics
Author(s) -
Sun Lin,
Feng Chude,
Chen Lidong,
Huang Shiming
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02064.x
Subject(s) - materials science , raman spectroscopy , analytical chemistry (journal) , mineralogy , aurivillius , perovskite (structure) , dielectric , sintering , doping , crystallography , ferroelectricity , chemistry , metallurgy , optics , physics , optoelectronics , chromatography
The dielectric and piezoelectric properties of SrBi 2− x Sm x Nb 2 O 9 ( x =0, 0.05, 0.1, 0.2, 0.3, and 0.4) ceramics were investigated. SrBi 2− x Sm x Nb 2 O 9 ceramics were synthesized by the conventional solid‐state reaction sintering method. An X‐ray diffraction measurement indicated that a single‐phase‐layered perovskite was obtained for all compositions. The substitution of Sm 3+ for Bi 3+ in the Bi 2 O 2 layers induced a relaxor behavior of frequency dispersion for SrBi 2− x Sm x Nb 2 O 9 . The Raman spectra of SrBi 2− x Sm x Nb 2 O 9 revealed that the decrease in T m could be attributed to smaller structural distortion of NbO 6 octahedra that is induced by the substitution of Sm 3+ for Bi 3+ . SrBi 2− x Sm x Nb 2 O 9 ( x ≤0.2) ceramics are suitable for fine tolerance resonator applications because the Sm 3+ doping in Bi 2 O 2 layers can improve the temperature coefficient of resonance frequency.