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Synthesis and Photoluminescence of Eu 2+ ‐Doped α‐Silicon Nitride Nanowires Coated with Thin BN Film
Author(s) -
Xu Xin,
Nishimura Toshiyuki,
Huang Qing,
Xie RongJun,
Hirosaki Naoto,
Tanaka Hidehiko
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02055.x
Subject(s) - nanowire , materials science , doping , photoluminescence , scanning electron microscope , thin film , transmission electron microscopy , optoelectronics , silicon , luminescence , silicon nitride , nanotechnology , light emitting diode , high resolution transmission electron microscopy , composite material
A feasible doping strategy is introduced to synthesize Eu 2+ ‐doped α‐Si 3 N 4 nanowires coated with a thin BN film. The nanowires were characterized by X‐ray diffraction, scanning electron microscopy, high‐resolution transmission electron microscopy, and a fluorescence spectrophotometer. The Eu 2+ ‐doped α‐Si 3 N 4 nanowires emitted strong yellow light, which is related to the 4 f 6 5 d –4 f 7 transition of Eu 2+ , upon a broad excitation wavelength range between 250 and 450 nm. The obtained nanowires provided a potential candidate for application in optical nanodevices, as well as in white LEDs.