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Enhancement of T c(0) by Substitution of Gallium in the Bismuth‐Based High‐ T c Superconducting Material
Author(s) -
Iqbal Muhammad Javed,
Mehmood Rashid
Publication year - 2008
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02051.x
Subject(s) - gallium , bismuth , electrical resistivity and conductivity , copper , superconductivity , analytical chemistry (journal) , magnetic susceptibility , materials science , powder diffraction , phase (matter) , diffraction , x ray crystallography , crystallography , nuclear chemistry , mineralogy , chemistry , metallurgy , condensed matter physics , physics , optics , chromatography , quantum mechanics , organic chemistry
We report the enhancement of the zero resistivity T c(0) by 5.5 K i.e. from 104 to 109.5 K by substitution of gallium 1.34% of copper in the bismuth 2223 compound. A series of Ga‐containing compounds Bi 2 Pb 0.4 Sr 2 Ca 2 Cu 3− x Ga x O y ( x =0.00, 0.02, 0.04, 0.06, and 0.08) are synthesized by the solid‐state reaction method. The samples are characterized by measurements of their dc electrical resistivity and ac magnetic susceptibility and by the powder X‐ray diffraction analysis. It is noted that the high‐ T c (2223) phase increases from 57.55% in an undoped sample to 92.99% in samples containing a low concentration of gallium i.e. x ≤0.04.