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Photoluminescence from Boron‐Doped Titanium Nitride Nanocomposite Thin Films Prepared by the Magnetron Sputtering Method
Author(s) -
Lu ShengGuo,
Lu YongHao,
Xu ZhengKui,
Cheah KwokWai
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.02040.x
Subject(s) - materials science , photoluminescence , boron nitride , sputter deposition , thin film , nanocomposite , titanium nitride , doping , transmission electron microscopy , sputtering , optoelectronics , analytical chemistry (journal) , nitride , nanotechnology , chemistry , layer (electronics) , chromatography
Boron‐doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X‐ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ∼5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350–900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor‐bound excitons and deep‐trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep‐trap defects was observed in the nanocomposite thin film.