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Effect of Al Doping on the Electric and Dielectric Properties of CaCu 3 Ti 4 O 12
Author(s) -
Choi SungWoo,
Hong SeongHyeon,
Kim YoungMin
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01983.x
Subject(s) - dielectric , materials science , doping , dissipation factor , grain boundary , dielectric loss , electrical resistivity and conductivity , dielectric spectroscopy , analytical chemistry (journal) , condensed matter physics , permittivity , mineralogy , composite material , microstructure , chemistry , electrode , electrical engineering , electrochemistry , optoelectronics , physics , engineering , chromatography
Al‐doped CaCu 3 Ti 4− x Al x O 12− x /2 (CCTO, x =0–0.1) ceramics were prepared by the solid‐state reaction, and their electric and dielectric properties were investigated. Al doping has been shown to reduce the dielectric loss remarkably while maintaining a high dielectric constant. At x =0.06, the loss tangent (tan δ) was below 0.06 over the frequency range of 10 2 –10 4 Hz, and the dielectric constant was 41 000 at 10 kHz. Impedance spectra indicated that Al doping increased the resistivity of the grain boundary by an order of magnitude. The improvement of the dielectric loss in Al‐doped CCTO was attributed to the enhanced grain boundary resistivity.