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Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition
Author(s) -
Chen ShuTao,
Wang GenShui,
Zhang YuanYuan,
Yang LiHui,
Dong XianLin
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01912.x
Subject(s) - lanio , nucleation , materials science , ferroelectricity , substrate (aquarium) , deposition (geology) , thin film , lanthanum , orientation (vector space) , chemical engineering , crystallography , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , inorganic chemistry , optoelectronics , geometry , dielectric , chromatography , paleontology , oceanography , organic chemistry , mathematics , sediment , biology , engineering , geology
Highly (100)‐ and (110)‐oriented LaNiO 3 (LNO) thin films were successfully prepared on a Si (100) substrate using the chemical solution deposition method. It was somewhat surprising to find that the orientation of LNO films depended on the heating rates of the temperature range of 200°–400°C. The samples with heating rates beyond 10°C/s showed the preferential (100) orientation, while those with heating rates below 6.67°C/s showed the preferential (110) orientation. The orientation mechanism is controlled by the thermodynamics of nucleation and crystal growth. LNO films with controlled orientation having low resistivities of 2 mΩ·cm are a good basis for integrating ferroelectric applications.