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Defect Chemistry of Undoped and Acceptor‐Doped BaPbO 3
Author(s) -
Lu YuDong,
Wang Xin,
Zhuang ZhiQiang,
Liu BaoLing
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01908.x
Subject(s) - acceptor , impurity , doping , conductivity , electrical resistivity and conductivity , oxygen , chemistry , crystallite , materials science , analytical chemistry (journal) , crystallography , optoelectronics , condensed matter physics , organic chemistry , physics , engineering , electrical engineering
The equilibrium defect chemistry of polycrystalline, undoped, and acceptor‐doped BaPbO 3 was studied by measurement of the equilibrium electrical conductivity as a function of temperature, 800°–900°C, and oxygen activity, 10 −18 –1 atm. Both equilibrium electrical conductivity data of undoped and acceptor‐doped samples were quantitatively fit to a defect model involving only doubly ionized oxygen vacancies, lead vacancies, holes, and acceptor impurities. The results in low and midrange of oxygen activity are dominated by acceptor impurities, whether deliberately added or not. Only in the highly oxidized condition is the conductivity independent of impurity content, confirming that this region represents the intrinsic behavior of BaPbO 3 .