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Electrical Properties of Superlattice‐Structured Bi 4 Ti 3 O 12 –PbBi 4 Ti 4 O 15 Single Crystals
Author(s) -
Ikezaki M.,
Noguchi Y.,
Miyayama M.
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01844.x
Subject(s) - superlattice , materials science , ferroelectricity , polarization (electrochemistry) , condensed matter physics , hysteresis , single crystal , crystallography , optoelectronics , dielectric , chemistry , physics
Single crystals of superlattice‐structured ferroelectrics composed of Bi 4 Ti 3 O 12 and PbBi 4 Ti 4 O 15 were grown and the properties of polarization hysteresis and leakage current along the a ‐axis were investigated. Oxidation treatment led to a marked increase in leakage current at room temperature, showing that electron hole acts as a detrimental carrier for electrical conduction. A well‐developed polarization hysteresis with a remanent polarization of 41 μC/cm 2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi 2 O 2 layers.