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β‐Gallium Oxide as Oxygen Gas Sensors at a High Temperature
Author(s) -
Bartic Marilena,
Baban CristianIoan,
Suzuki Hisao,
Ogita Masami,
Isai Masaaki
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01842.x
Subject(s) - gallium , materials science , sputtering , thin film , crystallite , electrode , single crystal , oxygen sensor , resistive touchscreen , analytical chemistry (journal) , oxide , oxygen , diffraction , optoelectronics , nanotechnology , optics , chemistry , crystallography , metallurgy , physics , organic chemistry , engineering , chromatography , electrical engineering
Resistive oxygen sensors based on gallium oxide were fabricated in order to analyze their sensing performances (as sensitivity, response, and recovery time) in an oxygen atmosphere at 1000°C. We prepared three types of sensors using a β‐Ga 2 O 3 single crystal in a sandwich structure with Pt pad electrodes and β‐Ga 2 O 3 polycrystalline thin films deposited by using both the sputtering technique and the chemical solution deposition method. For thin‐film sensors, Pt interdigital electrodes were deposited on the surface of the films using the lift‐off method. X‐ray diffraction and atomic force microscopy investigations were performed to compare the structure and surface morphology of the samples. We achieved a response time of 10 s at 1000°C, while the sensitivity was 1.03 for the single crystal and 1.35–1.45 for thin films. The sensing properties depend on the preparation condition of Ga 2 O 3 devices.