Effect of Vacuum Annealing on the Phase Stability of Ti 3 SiC 2 | Zendy

Low It Meng | Zendy; Oo Zeya | Zendy; Prince Kathryn E. | Zendy

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Effect of Vacuum Annealing on the Phase Stability of Ti 3 SiC 2

Author(s) -

Low It Meng,

Oo Zeya,

Prince Kathryn E.

Publication year - 2007

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/j.1551-2916.2007.01817.x

Subject(s) - materials science , annealing (glass) , analytical chemistry (journal) , diffraction , secondary ion mass spectrometry , synchrotron radiation , neutron diffraction , x ray crystallography , thermal stability , ion , crystallography , chemistry , metallurgy , optics , physics , organic chemistry , chromatography

The effect of vacuum annealing on the thermal stability and phase transition of Ti 3 SiC 2 has been investigated by X‐ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti 3 SiC 2 undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti 5 Si 3 C x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum‐annealed Ti 3 SiC 2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti 5 Si 3 C x with depth.

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