Premium
Influence of Phase Formation on Dielectric Properties of Si 3 N 4 Ceramics
Author(s) -
Li JunQi,
Luo Fa,
Zhu DongMei,
Zhou WanCheng
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01716.x
Subject(s) - dielectric , materials science , ceramic , silicon nitride , sintering , analytical chemistry (journal) , nitride , phase (matter) , relaxation (psychology) , mineralogy , silicon , composite material , metallurgy , chemistry , optoelectronics , psychology , social psychology , organic chemistry , chromatography , layer (electronics)
The influence of phase formation on the dielectric properties of silicon nitride (Si 3 N 4 ) ceramics, which were produced by pressureless sintering with additives in MgO–Al 2 O 3 –SiO 2 system, was investigated. It seems that the difference in the dielectric properties of Si 3 N 4 ceramics sintered at different temperatures was mainly due to the difference of the relative content of α‐Si 3 N 4 , β‐Si 3 N 4 , and the intermediate product (Si 2 N 2 O) in the samples. Compared with α‐Si 3 N 4 and Si 2 N 2 O, β‐Si 3 N 4 is believed to be a major factor influencing the dielectric constant. The high‐dielectric constant of β‐Si 3 N 4 could be attributed to the ionic relaxation polarization.