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Structure Characterization of HSQ Films for Low Dielectrics Uses D4 as Sacrificial Porous Materials
Author(s) -
Yin Guiqin,
Ning Zhaoyuan,
Yuan Qianghua,
Ye Chao,
Xin Yu
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01713.x
Subject(s) - dielectric , low k dielectric , materials science , annealing (glass) , porosity , fourier transform infrared spectroscopy , thin film , chemical engineering , analytical chemistry (journal) , nanotechnology , composite material , chemistry , optoelectronics , organic chemistry , engineering
Hydrogensilsesquioxane (HSQ) (low‐ k ) films were prepared by spin‐on deposition using D4 (octamethyl cyclotetrasiloxane) as a sacrificial porous material. The dielectric constant of silica films significantly changed from 3.0 to 2.2. Fourier transform infrared spectroscopy was used to identify the network structure and cage structure of the Si–O–Si bond and other bonds that may appear. We studied the structural and electrical properties of the spin‐coated films prepared by mixing HSQ and D4 films after oxygen plasma exposure for 5 min, and studied the structural recovery of the damage by annealing at 350°C for 1.5 h in a nitrogen (N 2 ) ambient. This structure results in significant lowering of the dielectric constant ( k ) on annealing at 350°C for 1.5 h in an N 2 ambient and improvement in the leakage current density.