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Interdiffusion Between Ti 3 SiC 2 –Ti 3 GeC 2 and Ti 2 AlC–Nb 2 AlC Diffusion Couples
Author(s) -
Ganguly Adrish,
Barsoum Michel W.,
Doherty Roger D.
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01680.x
Subject(s) - materials science , diffusion , analytical chemistry (journal) , thermal diffusivity , atmospheric temperature range , metal , transition metal , diffusion barrier , chemical composition , titanium , crystallography , tantalum , metallurgy , chemistry , thermodynamics , composite material , layer (electronics) , biochemistry , physics , chromatography , catalysis , organic chemistry
In this work, we report on the interdiffusion of Ge and Si in Ti 3 SiC 2 and Ti 3 GeC 2 , as well as that of Nb and Ti in Ti 2 AlC and Nb 2 AlC. The interdiffusion coefficient, D int , measured by analyzing the diffusion profiles of Si and Ge obtained when Ti 3 SiC 2 –Ti 3 GeC 2 diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti 3 Ge 0.5 Si 0.5 C 2 ), was found to be given byDint increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti 2 AlC–Nb 2 AlC couples was measured in the 1723–1873 K temperature range. The D int for the Matano interface composition, viz. ≈(Ti 0.5 ,Nb 0.5 ) 2 AlC, was found to be given byAt 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter.