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Nitridation of Silica Characterized by High‐Energy X‐Ray Diffraction Technique
Author(s) -
Wakihara Toru,
Yamakawa Tomohiro,
Tatami Junichi,
Komeya Katsutoshi,
Meguro Takeshi,
Kohara Shinji
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2007.01577.x
Subject(s) - silicon oxynitride , silicon nitride , crystallization , materials science , silicon , diffraction , amorphous solid , nitride , crystallography , ring (chemistry) , nanocrystalline silicon , amorphous silicon , chemical engineering , crystalline silicon , layer (electronics) , nanotechnology , optics , chemistry , optoelectronics , organic chemistry , physics , engineering
The structure of amorphous silicon oxynitride formed under nitridation conditions using ammonia gas, before the onset of silicon nitride crystallization, is determined employing high‐energy X‐ray diffraction (HEXRD) technique. The derived real‐space function suggests that smaller ring structures, especially 3R and 4R (R: ring), which are the dominant rings in crystalline silicon nitride, are not major species in amorphous silicon oxynitride, and form in the latter part of the silicon nitride crystallization.