Premium
Synthesis and Microwave Dielectric Properties of Re 3 Ga 5 O 12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics
Author(s) -
Kim Jae Chul,
Kim MinHan,
Lim JongBong,
Nahm Sahn,
Paik JongHoo,
Kim JongHee
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01435.x
Subject(s) - materials science , ceramic , temperature coefficient , dielectric , microwave , analytical chemistry (journal) , substrate (aquarium) , sintering , mineralogy , metallurgy , optoelectronics , chemistry , composite material , telecommunications , oceanography , chromatography , computer science , geology
Re 3 Ga 5 O 12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re 3 Ga 5 O 12 ceramics sintered at 1350°–1500°C had a high‐quality factor ( Q × f ) ranging from 40 000 to 192 173 GHz and a low‐dielectric constant (ɛ r ) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ f ) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm 3 Ga 5 O 12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛ r =12.4, Q × f =192 173 GHz, and τ f =−19.2 ppm/°C.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom