z-logo
Premium
Dielectric Relaxation in Layer‐Structured SrBi 2− x Nd x Nb 2 O 9 Ceramics ( x =0, 0.05, 0.2, 0.35)
Author(s) -
Sun Lin,
Feng Chude,
Chen Lidong,
Huang Shiming
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01405.x
Subject(s) - materials science , dielectric , ceramic , analytical chemistry (journal) , dispersion (optics) , mineralogy , sintering , relaxation (psychology) , doping , phase (matter) , chemistry , optics , metallurgy , physics , psychology , social psychology , optoelectronics , organic chemistry , chromatography
SrBi 2− x Nd x Nb 2 O 9 ( x =0, 0.05, 0.2, 0.35) ceramics were synthesized by the traditional solid‐state sintering method. X‐ray diffraction analysis showed that single‐phase‐layered perovskites were obtained for all compositions. The substitution of Nd 3+ for Bi 3+ induced a relaxor behavior of frequency dispersion for Nd‐doped SrBi 2 Nb 2 O 9 .The parameter of frequency dispersion Δ T m , which is the T m between 1 kHz and 1 MHz, increases from 0°C for x =0 to 13°C for x =0.35, and the degree of relaxor behavior γ increases from 0.96 for x =0 to 2.02 for x =0.35. The temperature of the maximum dielectric constant T m decreases linearly with an increase in the Nd content ( x ).

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom