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Selection of TiN as the Interconnect Material for Measuring the Electrical Conductivity of Polymer‐Derived SiCN at High Temperatures
Author(s) -
Ryu HeeYeon,
Raj Rishi
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01345.x
Subject(s) - tin , materials science , electrical resistivity and conductivity , pyrolysis , interconnection , conductivity , slurry , composite material , polymer , metallurgy , chemical engineering , chemistry , electrical engineering , computer network , computer science , engineering
Three transition metals, Ni, Mo, and Ti, were reacted with SiCN at high temperatures, and the reaction products characterized by X‐ray diffraction. It was concluded that TiN is the most suitable interconnect material for the measurement of the electrical conductivity of SiCN at temperatures up to 1400°C. The TiN interconnects were produced by an in situ process on H‐shape specimens of SiCN, with an appropriate correction factor (which was obtained by finite‐element analysis) for the four‐point measurement of the electrical resistance. The process consisted of placing a small drop of a slurry constituted from liquid Ceraset™ (the precursor for SiCN) and Ti metal powder (50 wt%) on the contact point. The droplet was photo‐cured and pyrolyzed. The TiN interconnect was generated during the pyrolysis. Finally, as an example, the measurement of the conductivity of a SiCNO sample up to 1300°C is reported. A more complete study of the relationship between the conductivity and the composition of SiCNO will be reported separately.