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Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO 2 Buffer Layer on an Electroless Ni‐Coated Cu Foil
Author(s) -
Kim Taeyun,
Kingon Angus I.,
Maria Jonpaul,
Croswell Robert T.
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01240.x
Subject(s) - materials science , lead zirconate titanate , buffer (optical fiber) , foil method , cubic zirconia , layer (electronics) , capacitor , capacitance , composite material , thin film , optoelectronics , ferroelectricity , nanotechnology , dielectric , electrode , ceramic , electrical engineering , voltage , chemistry , engineering
The effect of zirconia (ZrO 2 ) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)‐coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO 2 buffer layers retained acceptable capacitance densities (>350 nF/cm 2 for 50 nm thick ZrO 2 ), while significantly reducing leakage currents and improving reliability (<10 −7 A/cm 2 after 1 h at 25 VDC for 100 nm thick ZrO 2 ), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.