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Oxidation of Zirconium Diboride–Silicon Carbide at 1500°C at a Low Partial Pressure of Oxygen
Author(s) -
Rezaie Alireza,
Fahrenholtz William G.,
Hilmas Gregory E.
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01229.x
Subject(s) - partial pressure , zirconium diboride , microstructure , materials science , silicon carbide , scanning electron microscope , oxide , zirconium , silicon , oxygen , chemical engineering , carbide , metallurgy , analytical chemistry (journal) , chemistry , composite material , organic chemistry , engineering , chromatography
The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and ∼350 ppm CO 2 was used to produce an oxygen partial pressure of ∼10 −10 Pa at 1500°C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X‐ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO–CO 2 produced a non‐protective oxide surface scale.