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Diffuse Ferroelectric Phase Transition and Relaxor Behaviors in Ba‐Based Bismuth Layer‐Structured Compounds and La‐Substituted SrBi 4 Ti 4 O 15
Author(s) -
Hou R. Z.,
Chen X. M.,
Zeng Y. W.
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01175.x
Subject(s) - ferroelectricity , bismuth , materials science , phase transition , dielectric , phase (matter) , dipole , analytical chemistry (journal) , condensed matter physics , mineralogy , crystallography , chemistry , physics , metallurgy , optoelectronics , organic chemistry , chromatography
The dielectric characteristics of BaBi 2 Nb 2 O 9 , BaBi 4 Ti 4 O 15 , BaBi 8 Ti 7 O 27 , and La‐substituted SrBi 4 Ti 4 O 4 were investigated to discuss their ferroelectric phase transition and relaxor behaviors. BaBi 2 Nb 2 O 9 showed typical relaxor behaviors, and a shift of T m with increasing frequency was observed in BaBi 4 Ti 4 O 15 and SrBi 4− x La x Ti 4 O 15 ( x =0.8, 1.0) but they underwent a real paraelectric–ferroelectric phase transition on zero‐field cooling, while BaBi 8 Ti 7 O 27 showed a normal ferroelectric nature. The reduced concentration and weakened coupling of the dipoles related to A‐site bismuth are believed to be responsible for the appearance of short‐range electric ordering and the relaxor behaviors in these bismuth layer‐structured compounds.