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Self‐Propagating High‐Temperature Synthesis of Ti 3 SiC 2 : Study of the Reaction Mechanisms by Time‐Resolved X‐Ray Diffraction and Infrared Thermography
Author(s) -
Gauthier Véronique,
Cochepin Benoît,
Dubois Sylvain,
Vrel Dominique
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01120.x
Subject(s) - materials science , titanium , self propagating high temperature synthesis , silicon , graphite , infrared , diffraction , impurity , phase (matter) , thermography , x ray crystallography , x ray , silicon carbide , analytical chemistry (journal) , microstructure , composite material , optics , chemistry , metallurgy , organic chemistry , physics
Ti 3 SiC 2 is synthesized by self‐propagating high‐temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time‐resolved X‐ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti 3 SiC 2 might be formed from Ti–Si liquid phase and solid TiC x . Finally, the effect of the powders starting composition on the Ti 3 SiC 2 synthesis is studied. For the investigated initial mixtures, TiC x is always formed as a major impurity together with the Ti 3 SiC 2 phase.