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Properties of Dy 3+ ‐Doped Ge–As–Ga–Se Chalcogenide Glasses
Author(s) -
Jing Ren,
Guang Yang,
Huidan Zeng,
Xianghua Zhang,
Yunxia Yang,
Guorong Chen
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.01070.x
Subject(s) - devitrification , chalcogenide , materials science , analytical chemistry (journal) , doping , differential thermal analysis , stoichiometry , spectral line , phase (matter) , chalcogenide glass , mineralogy , crystallization , chemistry , optics , optoelectronics , thermodynamics , physics , chromatography , organic chemistry , astronomy , diffraction
In the present work, properties of Dy 3+ ‐doped chalcogenide glasses as a stoichiometric formula of (0.9− x )GeSe 2 – x AsSe 3/2 –0.1GaSe 3/2 ( x =0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge–Ga–Se system. Property measurements include differential thermal analysis, density, Vis‐NIR and IR transmission spectra, and fluorescent emission spectra. Judd–Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 μm emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two‐dimensional–three‐dimensional topological phase transition.