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Fractographic Montage for a Si 3 N 4 –SiC Nanocomposite
Author(s) -
Kašiarová Monika,
Dusza Ján,
Hnatko Miroslav,
Šajgalík Pavol,
Reece Michael J.
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2006.00956.x
Subject(s) - materials science , sintering , nanocomposite , silicon nitride , composite material , silicon carbide , weibull distribution , silicon , nitride , fracture (geology) , grain size , carbide , fracture toughness , flexural strength , mineralogy , metallurgy , statistics , chemistry , mathematics , layer (electronics)
A silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO 2 carbo‐thermal reduction during the sintering process. The materials consist of a silicon nitride matrix, with an average grain size of 140 nm, and inter‐ and intragranular SiC particles with sizes of approximately 250 and 45 nm, respectively. The four‐point bending strength and its distribution were investigated. The fracture origins were identified and characterized using fractographic methods, and a fractographic montage of the Weibull plot and fracture origins was constructed. The fracture origins were subsurface and volume located processing defects with sizes from 5 to 460 μm, mainly in the form of clusters of pores, together with clusters of large SiC grains.